182/183/210/210R
| Model | N--182 | N--183 | N--210 | N--210R |
| Dimensions (mm) | 182×182±0.3 | 182.2×183.75±0.3 | 210×210±0.3 | 182×210±0.3 |
| Wafer length(mm) | 247±0.25 | 256±0.25 | 295±0.25 | 272±0.25 |
| Thickness (μm) | 130-150 | |||
| EFF | 25.1%-26.2% | |||
| Item | Specification | Inspection Method |
| Electrical resistivity（Ω.cm） | 0.4-1.6 | Wafer inspection system |
| Oxygen content （at/cm³） | ≤6E + 17 | FTIR spectrometer |
| Carbon content（at/cm³） | ≤ 5E + 16 | FTIR spectrometer |
| Minority carrier lifetime（μs） | ≥1000 | Transient with injection level: 5E14 cm-3（Sinton BCT-400 ） |
| Item | Specification | Inspection Method |
| Crystal growth mode | CZ Czochralski Method | — |
| Wafer Type | Mono | preferential etching (ASTMF47-88) |
| Dislocation density（pcs/c㎡） | ≤500 | XRD(ASTM F26-1987) |
| Surface orientation | <100>±3° | XRD(ASTM F26-1987) |
| Lateral orientation | <010>, <001>±3° | XRD(ASTM F26-1987) |
